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parameter typ. max. units r ja maximum junction-to-ambient 75 100 hexfet power mosfet these p-channel mosfets from international rectifier utilize advanced processing techniques to achieve extremely low on- resistance per silicon area. this benefit, combined with the fast switching speed and ruggedized device design that hexfet ? power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management. a thermally enhanced large pad leadframe has been incorporated into the standard sot-23 package to produce a hexfet power mosfet with the industry's smallest footprint. this package, dubbed the micro3 ? , is ideal for applications where printed circuit board space is at a premium. the low profile (<1.1mm) of the micro3 allows it to fit easily into extremely thin application environments such as portable electronics and pcmcia cards. the thermal resistance and power dissipation are the best available. thermal resistance v dss = -20v r ds(on) = 0.065 ? ultra low on-resistance p-channel mosfet sot-23 footprint low profile (<1.1mm) available in tape and reel fast switching
08/11/04 www.irf.com 1 s d g parameter max. units v ds drain- source voltage -20 v i d @ t a = 25c continuous drain current, v gs @ -4.5v -3.7 i d @ t a = 70c continuous drain current, v gs @ -4.5v -2.2 a i dm pulsed drain current -22 p d @t a = 25c power dissipation 1.3 p d @t a = 70c power dissipation 0.8 linear derating factor 0.01 w/c e as single pulse avalanche energy 11 mj v gs gate-to-source voltage 12 v t j, t stg junction and storage temperature range -55 to + 150 c
micro3 ?
2 www.irf.com parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) ??? ??? showing the i sm pulsed source current integral reverse (body diode) ??? ??? p-n junction diode. v sd diode forward voltage ??? ??? -1.2 v t j = 25c, i s = -1.0a, v gs = 0v t rr reverse recovery time ??? 29 43 ns t j = 25c, i f = -1.0a q rr reverse recoverycharge ??? 11 17 nc di/dt = -100a/s repetitive rating; pulse width limited by max. junction temperature. pulse width 400s; duty cycle 2%. source-drain ratings and characteristics -1.3 -22 s d g for recommended footprint and soldering techniques refer to application note #an-994.

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# starting t j = 25c, l = 1.65mh r g = 25 ? , i as = -3.7a. parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage -20 ??? ??? v v gs = 0v, i d = -250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? -0.009 ??? v/c reference to 25c, i d = -1ma ??? 0.050 0.065 v gs = -4.5v, i d = -3.7a ??? 0.080 0.135 v gs = -2.5v, i d = -3.1a v gs(th) gate threshold voltage -0.40 - 0.55 -1.2 v v ds = v gs , i d = -250a g fs forward transconductance 6.0 ??? ??? s v ds = -10v, i d = -3.7a ??? ??? -1.0 v ds = -20v, v gs = 0v ??? ??? -25 v ds = -20v, v gs = 0v, t j = 70c gate-to-source forward leakage ??? ??? -100 v gs = -12v gate-to-source reverse leakage ??? ??? 100 v gs = 12v q g total gate charge ??? 8.0 12 i d = -3.7a q gs gate-to-source charge ??? 1.2 1.8 nc v ds = -10v q gd gate-to-drain ("miller") charge ??? 2.8 4.2 v gs = -5.0v t d(on) turn-on delay time ??? 350 ??? v dd = -10v t r rise time ??? 48 ??? i d = -3.7a t d(off) turn-off delay time ??? 588 ??? r g = 89 ? t f fall time ??? 381 ??? r d = 2.7 ? c iss input capacitance ??? 633 ??? v gs = 0v c oss output capacitance ??? 145 ??? pf v ds = -10v c rss reverse transfer capacitance ??? 110 ??? ? = 1.0mhz electrical characteristics @ t j = 25c (unless otherwise specified) $ % ? r ds(on) static drain-to-source on-resistance i dss drain-to-source leakage current
www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 1 10 100 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs -7.00v -5.00v -4.50v -3.50v -3.00v -2.70v -2.50v -2.25v -v , drain-to-source voltage (v) -i , drain-to-source current (a) ds d -2.25v 1 10 100 0.1 1 10 100 20s pulse width t = 150 c j top bottom vgs -7.00v -5.00v -4.50v -3.50v -3.00v -2.70v -2.50v -2.25v -v , drain-to-source voltage (v) -i , drain-to-source current (a) ds d -2.25v 10 100 2.0 3.0 4.0 5.0 6.0 7.0 8.0 v = -15v 20s pulse width ds -v , gate-to-source voltage (v) -i , drain-to-source current (a) gs d t = 25 c j t = 150 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d -4.5v -3.7a
4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0.1 1 10 100 0.1 1 10 100 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j c -v , drain-to-source voltage (v) -i , drain current (a) i , drain current (a) ds d 10us 100us 1ms 10ms 1 10 100 v ds , drain-to-source voltage (v) 0 200 400 600 800 1000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0 3 6 9 12 0 2 4 6 8 10 q , total gate charge (nc) -v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 -3.7a v = -10v ds 0.1 1 10 100 0.2 0.4 0.6 0.8 1.0 1.2 -v ,source-to-drain voltage (v) -i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j
www.irf.com 5 fig 11. maximum effective transient thermal impedance, junction-to-ambient fig 9. maximum drain current vs. case temperature fig 10. maximum avalanche energy vs. drain current 25 50 75 100 125 150 0.0 1.0 2.0 3.0 4.0 t , case temperature ( c) -i , drain current (a) c d 25 50 75 100 125 150 0 5 10 15 20 25 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom -1.7a -3.0a -3.7a 0.1 1 10 100 1000 0.00001 0.0001 0.001 0.01 0.1 1 10 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)
6 www.irf.com fig 13. typical on-resistance vs. drain current fig 12. typical on-resistance vs. gate voltage 2.0 3.0 4.0 5.0 6.0 7.0 -v gs, gate -to -source voltage ( v ) 0.02 0.04 0.06 0.08 0.10 0.12 0.14 r d s ( o n ) , d r a i n - t o - s o u r c e v o l t a g e ( ? ) id = -3.7a 0 5 10 15 20 25 30 -i d , drain current ( a ) 0.00 0.04 0.08 0.12 0.16 0.20 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) vgs = -4.5v vgs = -2.5v
www.irf.com 7 micro3 (sot-23/to-236ab) part marking information

part number part number code reference: a = irlml 2402 h = irl ml5203 b = irlml2803 c = i r l ml 63 02 d = irl ml 5103 g = irlml2502 f = irlml6401 e = irlml6402 lot code y = year w = we e k w = (1-26) if preceded by last digit of calendar year w = (27-52) if pre ceded by a le t t e r 26 z 1994 1998 2000 1999 1996 1997 1995 year 2002 2003 2001 30 d d 50 51 52 h k j f g e x y z we e k 27 28 29 wor k y b c a w b c a 2003 1997 2000 1999 1998 1995 1996 1994 2001 2002 year 03 c 3 04 24 25 7 0 9 8 5 6 4 x y d 01 02 we e k wor k 1 2 y a b w 0.08 0.88 0.01 0.89 0.95 bs c mil l ime t e r s mi n e e e1 d l a a1 a2 c m o b s y mi n max max .036 .0375 bs c dime ns ions inches b0.30 bbb 0.15 .008 ccc .006 0.25 bs c l1 l 0.40 0.60 .0118 bs c aaa 0.20 .004 0 8 8 0 2.80 1.20 0 e1 e d 5 6 3 12 ccc c b a b 5 6 e e1 a2 a a1 bbb c a b 3x b aaa c 3 s urf 0 3x l l1 h 4 7 2.10 e1 1.90 bs c .075 bs c .0119 .0032 .111 .083 .048 .055 .119 .103 .0196 .0078 .0039 .044 .0004 .035 .040 .0236 .0158 1.02 0.20 0.50 2.64 3.04 1.40 1.12 0.10 0.10 1.90 [.075] 0.95 [.0375] 0.972 [.038] 2.742 [.1079] 0.802 [.031] re comme nded f oot print 3x 3x not e s 1. dime ns ioning and t ole rancing pe r as me y14.5m-1994. 4 dat um plane h is locat ed at t he mol d part ing l ine. 5 dat um a and b t o b e de t e rmine d at dat um p lane h. 6 dime ns ions d and e 1 are me as ure d at dat um plane h. 2. dimensions are shown in millimet ers and inches. 3. controlling dimension: millimeter. 7 dimension l is the lead length for soldering to a substrate . 8. outline conforms t o jedec outline t o-236ab.
8 www.irf.com data and specifications subject to change without notice. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 08/04 ?

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2.05 ( .080 ) 1.95 ( .077 ) tr feed direction 4.1 ( .161 ) 3.9 ( .154 ) 1.6 ( .062 ) 1.5 ( .060 ) 1.85 ( .072 ) 1.65 ( .065 ) 3.55 ( .139 ) 3.45 ( .136 ) 1.1 ( .043 ) 0.9 ( .036 ) 4.1 ( .161 ) 3.9 ( .154 ) 0.35 ( .013 ) 0.25 ( .010 ) 8.3 ( .326 ) 7.9 ( .312 ) 1.32 ( .051 ) 1.12 ( .045 ) 9.90 ( .390 ) 8.40 ( .331 ) 178.00 ( 7.008 ) max. notes: 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541.

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